CHA3666 rohs compliant ref. : dsCHA3666-8108 - 17 apr 08 1/8 specification s subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 6-17ghz low noise amplifier gaas monolithic microwave ic description the CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. the circuit is manufactured with a standard phemt process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. main features broadband performance 6-17ghz 1.8db noise figure 26dbm 3 rd order intercept point 17dbm power at 1db compression 21db gain low dc power consumption vd1 vd 2 rfin rfout p1 p2 n2 ums vd1 vd 2 rfin rfout p1 p2 n2 ums main characteristics temp = +25c, vd1=vd2= +4v pads: p1, n2=gnd symbol parameter min typ max unit nf noise figure 1.8 2 db g gain 19 21 db ip3 3rd order intercept point 26 dbm esd protections: electrostatic discharge sensitive device observe handling precautions! 0,0 2,0 4,0 6,0 8,0 10,0 12,0 14,0 16,0 18,0 20,0 22,0 24,0 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 gain nf
CHA3666 6-17ghz low noise amplifier ref. : dsCHA3666-8108 - 17 apr 08 2/8 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics temp = +25c, pads: p1, n2 = gnd (1) symbol parameter min typ max unit fop operating frequency range 6 17 ghz g gain (2) 19 21 db d g gain flatness 0.5 db nf noise figure (2) 1.8 2 db is11i input return loss (2) 2.5:1 2.7:1 db is22i ouput return loss (2) 2.0:1 2.2:1 db ip3 3rd order intercept point (2) 26 dbm p1db output power at 1db gain comp.(2) (3) 15 17 dbm vd drain bias voltage 4 v id drain bias current 60 80 100 ma (1) the other pads are not connected (2) these values are representative of on-wafer measure ments that are made without bonding wires at the rf ports. (3) p1db can be increased (+0.5dbm) when p1 & p2 are co nnected and n2 non- connected. in this case id is typically 85ma absolute maximum ratings (1) temp = +25c symbol parameter values unit vd drain bias voltage 4.5 v pin rf input power 10 dbm top operating temperature range (chip backside) -40 to +85 c tj junction temperature 175 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these paramaters may cause permanent damage.
6-17ghz low noise amplifier CHA3666 ref. : dsCHA3666-8108 - 17 apr 08 3/8 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical scattering parameters (on wafer sij measurements) bias conditions : vd1=vd2= +4v pads: p1, n2 = gnd. freq dbs11 phs11 dbs12 phs12 dbs21 phs21 dbs22 phs22 ghz db db db db 0,5 -0,12 -12,41 -58,07 -75,30 -55,39 74,95 -0,16 -11,79 1,0 -0,15 -25,18 -66,93 158,40 -59,74 86,43 -0,19 -23,89 1,5 -0,21 -38,83 -68,19 -42,37 -55,53 -2,66 -0,26 -37,09 2,0 -0,31 -54,17 -70,23 132,40 -28,46 25,79 -0,62 -51,84 2,5 -0,53 -72,61 -66,09 -174,80 -11,74 2,26 -1,03 -68,34 3,0 -0,99 -96,30 -58,45 112,50 1,55 -54,65 -2,92 -84,65 3,5 -2,07 -129,20 -57,93 51,75 9,78 -105,90 -5,03 -92,78 4,0 -4,44 179,00 -53,52 -50,92 15,92 -157,20 -7,10 -98,70 4,5 -8,15 104,20 -48,40 -119,10 19,62 149,90 -8,51 -98,52 5,0 -9,23 35,18 -45,69 -159,90 21,13 103,90 -9,15 -100,90 5,5 -9,21 -2,42 -43,80 169,70 21,84 65,87 -9,80 -104,20 6,0 -9,07 -20,75 -42,66 145,70 22,14 34,89 -10,53 -107,90 6,5 -8,93 -30,17 -40,68 125,10 22,22 6,85 -10,91 -113,20 7,0 -8,37 -38,97 -40,46 107,20 22,22 -17,33 -11,49 -119,50 7,5 -7,99 -47,52 -39,16 88,92 22,19 -39,18 -11,76 -128,70 8,0 -7,87 -56,29 -38,17 75,16 22,23 -59,70 -12,47 -141,30 8,5 -7,75 -63,59 -38,58 62,12 22,19 -79,40 -13,87 -154,90 9,0 -7,54 -71,38 -37,51 42,64 22,08 -97,96 -15,57 -168,10 9,5 -7,50 -79,76 -37,26 36,06 22,03 -115,30 -17,57 176,80 10,0 -7,55 -88,86 -36,90 26,77 21,97 -132,00 -20,19 157,60 10,5 -7,77 -97,01 -36,76 12,22 21,93 -148,40 -23,18 132,40 11,0 -8,11 -105,90 -36,05 -1,08 21,90 -164,10 -25,38 96,42 11,5 -8,53 -114,50 -35,65 -13,41 21,88 -179,90 -26,39 54,20 12,0 -8,98 -122,60 -35,55 -24,05 21,86 164,70 -24,69 16,73 12,5 -9,62 -130,10 -35,31 -35,87 21,82 149,40 -22,43 -8,28 13,0 -10,22 -135,40 -35,13 -50,20 21,75 134,30 -20,23 -25,5 6 13,5 -10,60 -143,40 -35,13 -60,43 21,72 119,10 -19,67 -36,1 1 14,0 -11,07 -153,70 -34,80 -76,43 21,74 104,00 -19,22 -45,2 7 14,5 -11,34 -160,80 -34,90 -81,33 21,73 88,96 -18,20 -51,93 15,0 -11,28 -175,20 -36,47 -95,20 21,84 73,08 -17,69 -63,45 15,5 -11,14 164,00 -36,88 -112,40 21,64 55,53 -18,61 -77,33 16,0 -11,46 146,10 -37,33 -119,70 21,52 41,16 -17,96 -72,90 16,5 -10,91 125,00 -38,29 -129,70 21,68 24,37 -16,63 -75,48 17,0 -10,01 100,10 -38,86 -155,40 21,60 5,25 -14,95 -83,86 17,5 -9,02 72,69 -41,04 -161,40 21,15 -14,81 -13,51 -102,40 18,0 -8,00 45,92 -42,41 -173,60 20,44 -35,47 -12,40 -120,70 18,5 -7,75 21,28 -45,21 -161,70 19,26 -51,39 -13,47 -130,90 19,0 -7,02 0,74 -47,61 -177,80 18,39 -69,18 -11,57 -142,30 19,5 -6,59 -18,52 -50,99 -127,80 17,14 -86,07 -10,58 -160,6 0 20,0 -6,38 -35,21 -45,57 -104,20 15,75 -101,50 -9,99 -176,8 0
CHA3666 6-17ghz low noise amplifier ref. : dsCHA3666-8108 - 17 apr 08 4/8 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer measured performance temp = +25c vd1=vd2= +4v - pads: p1, n2 = gnd - id=80ma typical measurements on wafer (without bonding wires at the rf ports) s parameters versus frequency -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 2 4 6 8 10 12 14 16 18 20 frequency (ghz) sij (db) nf versus frequency 0 0,5 1 1,5 2 2,5 3 3,5 4 4,5 5 5,5 6 4 6 8 10 12 14 16 18 frequency (ghz) noise figure (db) s21 s11 s22
6-17ghz low noise amplifier CHA3666 ref. : dsCHA3666-8108 - 17 apr 08 5/8 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 output power at 1db compression gain versus frequen cy 12 12,5 13 13,5 14 14,5 15 15,5 16 16,5 17 17,5 18 18,5 19 19,5 20 5 6 7 8 9 10 11 12 13 14 15 16 17 18 frequency (ghz) pout -1db (dbm) ** p1=n2=grounded * p1=p2=grounded * typical consumption : 85ma ** typical consumption : 80ma
CHA3666 6-17ghz low noise amplifier ref. : dsCHA3666-8108 - 17 apr 08 6/8 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 c/i3 versus output power @configuration: p1_p2 grou nded 0 10 20 30 40 50 60 1 2 3 4 5 6 7 8 9 10 11 12 13 14 single output power(dbm) c/i3(db) ci3 -6ghz ci3 -7ghz ci3 -8ghz ci3 -9ghz ci3 -10ghz ci3 -12ghz ci3 -14ghz ci3 -16ghz ci3 -17ghz ci3 -18ghz ip3 versus output power @configuration p1_p2 groun ded 10 12 14 16 18 20 22 24 26 28 30 1 2 3 4 5 6 7 8 9 10 11 12 13 14 single output power (dbm) output ip3 (dbm) ip3_6ghz ip3_7ghz ip3_8ghz ip3_9ghz ip3_10ghz ip3_12ghz ip3_14ghz ip3_16ghz ip3_17ghz ip3_18ghz
6-17ghz low noise amplifier CHA3666 ref. : dsCHA3666-8108 - 17 apr 08 7/8 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data note: supply feed should be capacitively bypassed. 25m diameter gold wire is recommended . bonding pad position 10nf 120pf 120pf vd1, vd2 dc drain supply feed dc pads size: 100/100m, chip thickness: 100 m m p1 n2 p2
CHA3666 6-17ghz low noise amplifier ref. : dsCHA3666-8108 - 17 apr 08 8/8 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip biasing options this chip is self-biased, and flexibility is provid ed by the access to number of pads. the internal dc electrical schematic is given in order to use these pads in a safe way. two standard biasing: low noise and low consumption: vd1=vd2 = 4v and p 1, n2 grounded. p2 pads non connected (nc). idd = 80ma & pout-1db = 17dbm typical. low noise and higher output power vd1=vd2 = 4v and p1, p2 grounded. n2 pads non connected (nc). idd = 85ma & pout-1db = 17 .5dbm typical. ordering information chip form : CHA3666-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s. rfin rfout vd1 vd2 1.5k 3.1k 0.3k 0.3k 40 2.5 20 20 90 90 p1 p2 n2 8
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